Factory Lead Time  

13 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Number of Pins  

7

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

105A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

380W Tc

Turn Off Delay Time  

37 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2008

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

6

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

11.8MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G6

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

380W

Case Connection  

DRAIN

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

11.8m Ω @ 63A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

5320pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 10V

Rise Time  

50ns

Vgs (Max)  

±20V

Fall Time (Typ)  

23 ns

Continuous Drain Current (ID)  

105A

Threshold Voltage  

5V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

150V

Pulsed Drain Current-Max (IDM)  

420A

Dual Supply Voltage  

150V

Avalanche Energy Rating (Eas)  

230 mJ

Nominal Vgs  

5 V

Height  

4.572mm

Length  

10.668mm

Width  

9.65mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free